Datakeskuksissa datan nopea siirtely prosessorin ja DRAM-muistin välillä on keskeinen ominaisuus. HBM eli High Bandwidth Memory on ollut yksi keino lisätä nopeutta, mutta tekniikan ensimmäinen ja toinen polvi eivät oikein vastanneet huutoon. HBM3 on toista maata.

Korealainen SK Hynix on esitellyt markkinoiden ensimmäisen HBM3-määrityksiä tukevan muistin, joka yltää datansiirtoon 6400 gigabitin sekuntinopeudella. Tämä tarkoittaa käytännössä jopa 819 gigatavun väylää muistin ja prosessorin välillä.

HBM-arkkitehtuurissa pinotaan suhteellisen hitaita DRAM-siruja päällekkäin ja yhdistetään ne TSV-läpivienneillä. Tämä tuo käyttöön suhteessa erittäin nopean väylän. SK Hynixin uusimmat HMB3-muistit ovat nopeampia kuin ensimmäisen polven DDR5-muistit, jotka ovat vasta tulossa markkinoille.

SK Hynix aikoo tuoda tarjolle 16 ja 4 gigatavun HMB3-muisteja. 26 gigatavun muistilla on pinottu päällekkäin 12 kappaletta 16 gigabitin siruja. Jokaisen sirun paksuus on yhtiön mukaan 30 nanometriä eli koko paketin paksuus on alle kolmasosan tavallisen paperin paksuudesta.

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