Piikarbidi eli SiC on toinen uusista, nopeasti kasvavista tehoelektroniikan komponenttien materiaaleista. Trendforce ennustaa sille kovaa kasvua. Veturina ovat sähköautot ja erityisesti niissä siirtyminen 800 voltin arkkitehtuureihin.

Sähköajoneuvojen markkinoiden pidempien ajomatkojen ja lyhyempien latausaikojen suuren kysynnän vuoksi autonvalmistajien kilpailu korkeajännitteisiä sähköajoneuvoja vastaan ​​on huomattavasti voimistunut, kun useat suuret autonvalmistajat ovat vähitellen julkistaneet malleja, joissa on 800 voltin latausarkkitehtuuri. Tällaisia autoja ovat esimerkiksi Porsche Taycan, Audi Q6 E-tron ja Hyundai Ioniq 5.

TrendForcen mukaan 6 tuuman piikarbidikiekkojen kysyntä kasvaa 1,69 miljoonaan kiekkoon vuonna 2025. 800 voltin latausarkkitehtuurin saapuminen korvaa piipohjaiset IGBT -moduulit SiC-tehopiireillä, joista tulee vakiokomponentti sähöautoissa. Esimerkiksi Delphi on jo aloittanut 800 V SiC-invertterien massatuotannon.

Tällä hetkellä sähköautoista on tullut piikarbiditeholaitteiden ydinsovellus. Esimerkiksi piikarbidin käyttö latureissa ja DC-DC-muuntimissa on ollut suhteellisen kypsää, kun taas piikarbidiin perustuvien invertterien massatuotanto ei ole vielä lähtenyt toden teolla vauhtiin.

Trendforcen mukaan on syytä huomauttaa, että SiC-kiekkojen tuotantoketjun alkupäästä tulee tuotannon ensisijainen pullonkaula, koska piikarbidimateriaalit sisältävät monimutkaisia ​​valmistusprosesseja, esimerkiksi epitaksiaalinen kasvatus on hidasta.

Suurin osa tehopuolijohdelaitteisiin käytetyistä n-tyypin SiC-substraateista on halkaisijaltaan 6 tuumaa. Trendforcen mukaan 6-tuumaiset kiekot pysyvät pääosassa vielä ainakin viiden vuoden ajan.

Kuva: Microsemin (nyk. Microchipin) SiC-mosfet.

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